1/6 preliminary data october 2003 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change wit hout notice. STS10PF30L p-channel 30v - 0.012 w - 10a so-8 stripfet? ii power mosfet n typical r ds (on) = 0.012 w n standardoutlinefor easy automated surface mount assembly n low threshold drive description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance. applications n battery management in nomadic equipment n load switch ordering information type v dss r ds(on) i d STS10PF30L 30v <0.014 w 10 a sales type marking package packaging STS10PF30L s10pf30l so-8 tape & reel so-8 absolute maximum ratings note: for the p-channel mosfet actual polarity of voltages and current has to be reversed symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 16 v i d drain current (continuous) at t c = 25c 10 a i d drain current (continuous) at t c = 100c 6a i dm ( ) drain current (pulsed) 40 a p tot total dissipation at t c = 25c 2.5 w internal schematic diagram
STS10PF30L 2/6 thermal data (*) when mounted on 1 inch 2 fr-4 board, 2 oz of cu and t [ 10 sec. electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-amb rthj-lead t l t stg (*) thermal resistance junction-ambient thermal resistance junction-leads maximum lead temperature for soldering purpose storage temperature max max typ 47 16 150 -55 to 150 c/w c/w c c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1v r ds(on) static drain-source on resistance v gs = 10 v i d = 5 a v gs = 4.5 v i d = 5 a 0.012 0.015 0.014 0.018 w w symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds = 10 v i d =5 a 31 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 2300 750 115 pf pf pf
3/6 STS10PF30L switching on (*) switching off (*) source drain diode (*) (*) pulse width [ 300 s, duty cycle 1.5 %. ( ) pulse width limited by t jmax symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v i d = 5 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 1) 72 87 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15v i d = 10a v gs =4.5v (see test circuit, figure 2) 29 6.8 7.6 39 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 15 v i d = 5 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 1) 89 27 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) 10 40 a a v sd (*) forward on voltage i sd = 10 a v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a di/dt = 100a/s v dd = 15 v t j = 150c (see test circuit, figure 3) 48.5 68 2.8 ns nc a electrical characteristics (continued)
STS10PF30L 4/6 fig. 2: gate charge test circuit fig. 3: test circuit for diode recovery behaviour fig. 1: switching times test circuits for resistive load
5/6 STS10PF30L dim. mm inch min. typ. max. min. typ. max. a1.750.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m0.60.023 s 8 (max.) 0016023 so-8 mechanical data
STS10PF30L 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. a 2003 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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